An analytical 2-D model of triple metal double gate graded channel junctionless MOSFET with hetero-dielectric gate oxide stack

In this paper, a two-dimensional analytical model of laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting SiO2 and HfO2 is derived. The illustrates higher drive current better performance against hazardous SCEs HCEs in below 30 nm regime. Parabolic approximation method used here to construct channel potentials electric fields by solving 2-D Poisson's equation applicable boundary conditions. basic central surface as well are being illustrated, Threshold voltage, DIBL, sub-threshold swing (SS) compact have also been deduced. These parameters clearly show the benefits proposed structure hetero-dielectric stack. device has reliability low power applications because its Ion Ioff control. Finally, validated self-consistent numerical calculations illustrate among available junctionless devices.